CATEGORY_INDEX // 13 ENTRIES

FinFET

Infographic: gate-all-around nanosheet transistor made via DUV lithography (no EUV), with 500,000:1 on-off ratio reported by CAS Institute of Microelectronics; disputes viral 137.8 MTr/mm2 density claim as unverified back-of-envelope math, not China's actual data
CHIPS & AI · 09/26/2026

China Claims a 3nm-Class Transistor Without EUV

China's Institute of Microelectronics reports a significant 500,000 on-off current ratio for a new gate-all-around transistor using deep ultraviolet lithography. However, this measure alone…

4 MIN
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CHIPS & AI · 11/15/2019

SMIC 14nm: China Climbs the FinFET Cliff

SMIC 14nm was China's first homegrown FinFET, architected by Liang Mong Song and built for Huawei, proving SMIC could do leading-edge engineering at last.

4 MIN
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